Abstract

The nature of the nano-scale environment presents a major challenge for solid-state implementation of spin-based qubits. In III -V semiconductors favored for fabrication of high quality electrically and optically controlled nano-structures, a few nano-meter sized quantum dot contains up to 100000 nuclear spins producing a fluctuating magnetic field felt by the spin of the trapped electron. I will present most recent results on nuclear spin phenomena in several most promising types of III -V quantum dots including self-assembled (InGaAs/GaAs and InP/GaInP) and interface (GaAs/AlGaAs) nano-structures. Dynamics of the nuclear spin observed in time-resolved experiments on individual dots enables insight into the properties of a few thousand nuclear ensemble interacting with a single electron. We explore an extremely wide variety of time constants ranging from several nanoseconds up to a few hours in the dynamics of the composite electron-nuclear spin nano-system.