Abstract

Recent developments on solution blends of organic semiconductors in organic field effect transistor (OFETs) and sensors will be presented. The advantages of such an approach are seen as improved formulation latitude for printing, cost effectiveness and greater control over morphology of the organic semiconductor active layer. By consideration of the interaction of the active organic semiconductor and the second polymer during the film formation process, whether it is itself a semiconductor or an insulator, it is possible to generate a range of morphologies. When the active semiconductor is vertically stratified to the active interface [1,2] percolation thresholds at < 10 wt- with respect to filed effect mobility are observed whereas with less structured morphologies percolation thresholds around 50 wt- are obtained.