Abstract

We study the quantum mechanical behavior of individual electron, hole and nuclear spins in silicon. Control and manipulation of the corresponding spin states can lead to applications in quantum computation. To this end we isolate electrons or holes on (artificial) atoms through spatial and electrostatic confinement. In our experiments we perform a.o. energy- and magnetic spectroscopy in electron transport measurements at low temperatures. In my talk I will first of all present results on quantum dots (a.k.a. artificial atoms) in Ge/Si core/shell nanowires: a germanium core wrapped in a silicon shell. Secondly, we have used silicon nanoMOSFETs to reach single-electron occupation in a quantum dot, to create bipolar quantum dots and to read out and rotate the spin of a single electron bound to a phosphorus donor.