Abstract

Dr. Yi Gu will give an overview of the recent work on InP-based optoelectronic materials and devices carried out at the Shanghai Institute of Microsystem and Information Technology (SIMIT), part of the Chinese Academy of Sciences. This work includes InGaAs detectors, InGaAs(P) Avalanche Photodiodes (APDs), InP-based type-I Quantum Well (QW) lasers for emission at wavelengths beyond 2 µm and also bismuth-related materials and devices.

Dr. Gu earned his Ph. D. from SIMIT in 2009 and is currently an Associate Professor at the same institution. His research interests are the Molecular Beam Epitaxy (MBE) and the demonstration of III -V optoelectronic materials and devices. He has published more than 80 papers on peer-reviewed journals and four book chapters and has been visiting the University of Sheffield since September 2015, working on APD characterization and Bismide growth.