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SUMMARY:Performance optimization of 2.0-2.6 mm metamorphic InGaAs photodet
 ectors - Xingyou Chen\, Shanghai Institute of Microsystem and Information 
 Technology\, Chinese Academy of Sciences
DTSTART:20180521T131500Z
DTEND:20180521T141500Z
UID:TALK104887@talks.cam.ac.uk
CONTACT:Dr Joanna Waldie
DESCRIPTION:The so-called wavelength-extended In(x)Ga(1-x)As photodetector
  and arrays with x>0.53 are attracting particular interests as they show i
 mportant applications in spatial remote sensing\, etc. The ln(0.53)Ga(0.47
 )As photodetectors grown lattice-matched to InP are commercially mature wi
 th cutoff wavelength at 1.7 μm. By now\, large efforts have been devoted 
 to improve the performance of wavelength-extended InGaAs photodetectors du
 e to the lack of lattice-matched substrates. I will talk about the researc
 h background and the status in our laboratory. Also\, our latest efforts i
 n improving the device performance of the In(0.83)Ga(0.17)As photodetector
 s will be discussed. This includes the optimization of metamorphic buffers
  and electron barriers in the photodetector structures.
LOCATION:Mott Seminar Room (Mott Building Room 531)\, Cavendish Laboratory
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