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SUMMARY:2D device engineering of van der Waals heterostructures using dry 
 transfer techniques - Dr. Luke W. Smith\, Cavendish Laboratory\, Universit
 y of Cambridge
DTSTART:20180509T130000Z
DTEND:20180509T140000Z
UID:TALK105790@talks.cam.ac.uk
CONTACT:Dr Kaveh Delfanazari
DESCRIPTION:Next generation electronic devices are likely to rely on quant
 um technologies. Spintronics is one such emergent technology\, which uses 
 electron spin to store information [1\,2]. Spintronics offers faster proce
 ssing times than conventional alternatives as well as nonvolatile magnetic
  memory. It is attractive think of using graphene for this application bec
 ause of the long spin lifetime and spin propagation length at room tempera
 ture. However\, its spin orbit interaction (SOI) is naturally very low\, m
 aking it impossible to practically create spintronic devices.\n
     The
  properties of graphene can be artificially engineered by stacking other u
 ltra-thin materials above or below in what are known as van der Waals hete
 rostructures [3]. This method is very useful in effectively creating custo
 mized materials. It is theoretically predicted that the SOI in graphene is
  enhanced by placing in contact with topologically insulating materials su
 ch Bi2Se3 [4\,5]. We create van der Waals heterostructures of graphene wit
 h Bi2Se3 and investigate layer sequences and fabrication process which lim
 it device yield. We use a dry transfer process create devices\, a techniqu
 e that ensures high quality connecting interfaces by avoiding contaminatio
 n from processing materials. This is paramount to fabricating high quality
  devices and preserving the transport properties of graphene.\n

[1] I
 . Zutic et al.\, Rev. Mod. Phys. 76\, 323 (2004).
[2] W. Han et al.\, Na
 ture Nanotec. 9\, 794 (2014).\n[3] A. K. Geim et al.\, Nature 499\, 419 (2
 013).
[4] K.-H. Jin et al.\, Phys. Rev. B 87\, 075442 (2013).
[5] L. K
 ou et al.\, Nano Lett. 13\, 6251 (2013).
\n
LOCATION:Mott Seminar Room (Mott Building Room 531)\, Cavendish Laboratory
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