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SUMMARY:Using scanning probes to fabricate and characterise nanoscale dono
 r devices in silicon - Neil Curson\, Centre for the Advanced Characterisat
 ion of Materials\, University College London
DTSTART:20190228T160000Z
DTEND:20190228T170000Z
UID:TALK106888@talks.cam.ac.uk
CONTACT:Stephen Walley
DESCRIPTION:Atomic and nano-scale structures consisting of dopants buried 
 in silicon can be used to make novel quantum devices. The process of fabri
 cating buried donor structures using scanning tunnelling microscope-based 
 lithography\, combined with precursor gas adsorption and molecular beam ep
 itaxy will be described. In addition\, the electrical and optical characte
 risation of such structures using other techniques will be discussed\, in 
 particular revealing new physics about the interaction of the orbital dopa
 nt states with their local environment.
LOCATION:Mott Seminar Room\, Cavendish Laboratory
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