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SUMMARY:Depletion Layer Actuators - Dr James Ransley (University of Cambri
 dge)
DTSTART:20080212T160000Z
DTEND:20080212T170000Z
UID:TALK10752@talks.cam.ac.uk
CONTACT:Joshua En-Yuan Lee
DESCRIPTION:The uncompensated donor or acceptor atoms present within the d
 epletion layer of a diode can be employed in an electrostatic actuator whi
 ch utilizes the force between them and their opposing charges on the other
  side of the junction. In this work we describe the theory of such a deple
 tion layer actuator and demonstrate its application for the simple case of
  a shottky diode located on the top surface of a cantilever resonator. Ini
 tial results demonstrate that the technique works and are in reasonable ag
 reementt with the device theory.
LOCATION:CAPE building seminar room 21-23. 9 JJ Thomson Ave. CB3 0FA
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