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SUMMARY:Development of a lateral pn junction - Mr. Shak Fernandes\,  Caven
 dish Laboratory\, University of Cambridge   
DTSTART:20181121T140000Z
DTEND:20181121T150000Z
UID:TALK115210@talks.cam.ac.uk
CONTACT:Dr Kaveh Delfanazari
DESCRIPTION:Lateral pn junctions have a coplanar geometry making them idea
 lly suited for integration with other lateral devices\, such as single ele
 ctron pumps. Primarily\, they allow the direct injection of electrons and 
 holes into the junction of a device. Several fabrication methods have been
  developed over the past years\, such as those by molecular beam epitaxy (
 MBE) growth on a patterned GaAs substrate where the Si dopant is employed 
 to simultaneously form a two-dimensional electron gas (2DEG) and two-dimen
 sional hole gas (2DHG) [1]. Other methods include\, partial etching of a G
 aAs/AlGaAs heterostructure to define the 2DEG and 2DHG regions [2]\, integ
 rated MBE growth with focused ion beam (FIB) [3] and use of completely und
 oped GaAs/AlGaAs quantum well structured p-i-n junctions using conventiona
 l lithographic processes and gate biases to form 2DEG and 2DHG regions [4]
 . \n     This project aims to integrate a lateral pn junction with a singl
 e electron pump to create a novel quantum light source. A critical stage i
 n the formation of a single photon source (SPS) is the demonstration of el
 ectron transport across a lateral pn junction resulting in luminescence. I
 deal SPSs have to generate indistinguishable photons\, on demand\, one aft
 er the other when periodically triggered [5]. Therefore\, a correlation mu
 st exist between the emission of a single photon and a single electron. Si
 ngle electron transport is achieved using an electron pump which consists 
 of two gate electrodes placed across a narrow shallow-etched channel on a 
 GaAs/AlGaAs HEMT. \n     This talk will discuss the current development pr
 ogress of a lateral pn junction fabricated on a modulation doped GaAs/AlGa
 As quantum well structured wafer. \n[1] J. R. Gell\, et al.\, Appl. Phys. 
 Lett. 89 (2006) 243505. \n[2] B. Kaestner\, et al.\, Jpn. J. Appl. Phys. 4
 1 (2002) 2513. \n[3] T. Hosey\, et al.\, Appl. Phys. Lett. 85 (2004) 491. 
 \n[4] V. T. Dai\, et al.\, Jpn. J. Appl. Phys. 2013\, 52\, 014001. \n[5] P
 . Senell\n
LOCATION:Ryle Seminar Room (930)\, Cavendish Laboratory\, Department of Ph
 ysics
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