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SUMMARY:Graphene At The Edge Of Perfection - Prof. Peter Bøggild\, (Techn
 ical University of Denmark)
DTSTART:20190208T160000Z
DTEND:20190208T170000Z
UID:TALK122191@talks.cam.ac.uk
CONTACT:Dr Anna Ott
DESCRIPTION:Defects and disorder of graphene edges has held back developme
 nt of graphene nanoelectronics for more than a decade. While lithographic 
 patterning of graphene on the scale of 10 nm has been demonstrated both wi
 th top-down (electron-beam lithography) and bottom-up methods (i.e. block 
 copolymer lithography)\, high-mobility waveguiding and bandstructure engin
 eering has not. I will show some examples of how graphene edge disorder ca
 n be tamed\, allowing new transport behaviors to be observed\, including s
 uppression of the quantum Hall effect in pristine nano-constrictions[1]\, 
 bandgap engineering of Dirac and cloned Dirac cones in ultradense antidot 
 lattices etched through encapsulated graphene[2] and ferroelectric switchi
 ng of polar molecules at the edge of graphene[3]. I will also touch upon c
 rystallographic etching as a tool for shaping graphene on the nanoscale[4]
 .\n\n[1] J. Caridad et al Nature Comm. 9\, 659 (2018)\n[2] B. S. Jessen\, 
 et al. Nature Nanotech. (2019)\n[3] J. Caridad et al\, Nano Lett. 18\, 467
 5 (2018).\n[4] J.D. Thomsen et al. ACS Nano (2009) 
LOCATION:Cambridge Graphene Centre Seminar Room
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