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SUMMARY:Strain Measurement in Electronic Devices by Transmission Electron 
 Microscopy - Florian Hue\, CEMES-CNRS\, Tououse\, France
DTSTART:20080715T110000Z
DTEND:20080715T120000Z
UID:TALK12893@talks.cam.ac.uk
CONTACT:Dr Jonathan Barnard
DESCRIPTION:Strain improves performance in MOSFET devices by increasing ca
 rrier mobility and by shifting the band structure of the channel. With the
  move towards 32 nm device technology\, strain needs to be measured accura
 tely on the nanoscale. TEM seems to be a tool of choice for such studies.\
 nWe present two methods to map strain in microelectronic devices at the na
 nometer scale. Aberration corrected high resolution transmission electron 
 microscopy (HRTEM) coupled with Geometric Phase Analysis (GPA) provides su
 fficient signal/noise to measure the displacement fields accurately. Finit
 e Element Method simulations confirm our measurements. The field of view i
 s however limited to an area of 200 nm x 200 nm. To overcome this\, we hav
 e developed a new technique called dark-field holography based on off-axis
  electron holography and dark-field imaging. This new technique provides a
  better strain resolution than HRTEM (reaching 0.05%)\, a spatial resoluti
 on of 4 nm and a field of view of 1 µm.\nExperiments are performed on the
  SACTEM-Toulouse\, a 200kV Tecnai F20 (FEI) fitted with objective lens abe
 rration corrector (CEOS)\, a 2k camera (Gatan) and a biprism. Finite eleme
 nt simulations (COMSOL) are performed\, including the full 3-dimensional s
 train distribution. Experimentally determined strains are compared with th
 e results from finite element simulations in the case of a 3D simulation o
 r in the limit cases of a thin or a thick lamella.
LOCATION:T001 [Tower Seminar Room]\, Materials Science and Metallurgy\, De
 partment of
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