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SUMMARY:Towards Organometallic Electronics: A Wolff type-III Solution-proc
 essable Ru(II)-Polymetallyne - Dr. sc. nat. Franziska Lissel\, Liebig Fell
 ow of the Association of the Chemical Industry\, TU Dresden Young Investig
 ator\, Independent Junior Research Group Leader
DTSTART:20190909T100000Z
DTEND:20190909T110000Z
UID:TALK129943@talks.cam.ac.uk
CONTACT:Kirsty Shepherd
DESCRIPTION:Conjugated metallopolymers give direct access to a wide range 
 of special electronic properties inferred by the metal center\, e.g. enhan
 ced spin-orbit coupling and stable redox chemistry.1\,2 Polymetallaynes ar
 e a special class of strongly conjugated Wolf type-III polymers3 with high
  potential in organic electronics. However\, polymetallaynes with redox-ac
 tive transition metals are rarely reported\, and lack the solubility neede
 d for processing. Yet studies on oligo-nuclear redox-active metal-acetylid
 e complexes demonstrated high conductivity\,4\,5 and the association of a 
 Fe(III) metal center was shown to boost charge mobility of a semiconductin
 g polymer\, and to increase the cycling stability of the fabricated OFETs\
 nWe recently established the synthetic routes to a Ru-containing polymetal
 lyne P[Ru(dppe)2-DDBT]\,6 containing Ru(II) centers bridged in trans-posit
 ion. The polymer was obtained by copper-free dehydrohalogenation\, charact
 erized using NMR\, IR and UV-vis spectroscopy\, MALDI\, GPC and CV. In sol
 ution\, CV studies show two separated metal-centered redox processes\, ind
 icating that the charge between metal centers is delocalized via the bridg
 ing ligand and a mixed-valence species exists (Kc = 102). In thin-film\, P
 [Ru(dppe)2-DDBT] exhibits a single oxidation wave with higher peak current
  intensity\, consistent with a two-electron process and localized charge. 
 Despite a degree of polymerization >32 based on NMR and GPC studies\,  P[R
 u(dppe)2-DDBT] is fully solution processable. Thin-films were obtained via
  spin-coating using\, and AFM investigations showed very low surface rough
 ness. First OFET devices with top-gate bottom-contact (TGBC) architecture 
 were fabricated to characterize the electronic properties\, confirming sem
 iconducting behaviour with low hole mobility up to 1×10−4 cm2V-1s-1.\n 
 \n\nReferences\n(1) B. J. Holliday and T. M. Swager\, Chem. Commun.\, 2005
 \, 23–36\; (2) T. M. Swager\, Macromolecules\, 2017\, 50\, 4867–4886.\
 n(3) M. O. Wolf\, J. Inorg. Organomet. Polym. Mater.\, 2006\, 16\, 189–1
 99\, (4) F. Schwarz\, G. Kastlunger\, F. Lissel\, H. Riel\, K. Venkatesan\
 , H. Berke\, R. Stadler and E. Lörtscher\, Nano Lett.\, 2014\, 14\, 5932
 –5940\; (5)Y. Tanaka\, Y. Kato\, T. Tada\, S. Fujii\, M. Kiguchi and M. 
 Akita\, J. Am. Chem. Soc.\, 2018\, 140\, 10080–10084: (6) P. Ho\, H. Kom
 ber\, K. Horatz\, T. Tsuda\, S. Mannsfeld\, E. Dmitrieva\, O. Blacque\, U.
  Kraft\, H. Sirringhaus and F. Lissel\, Polymer Chemistry 2019\, accepted.
 \n
LOCATION:Electrical Engineering\, Department of Engineering - EED Seminar 
 Room - 9 JJ Thomson Avenue\, Cambridge\, CB3 0FA
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