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SUMMARY:Out-of-plane charge transport anomalies in layered transition meta
 l dichalcogenides - Dr. Konstantin Semeniuk\; EPFL Lausanne
DTSTART:20200205T111500Z
DTEND:20200205T121500Z
UID:TALK138835@talks.cam.ac.uk
CONTACT:85960
DESCRIPTION:The prevailing strategy for functionalising quasi-two-dimensio
 nal materials is to manipulate the coupling between the atomic sheets to p
 roduce novel tunable electronic states with exploitable properties. The re
 sponsible interactions can be sensitively gauged by the interlayer charge 
 transport. This property\, however\, has so far remained largely unexplore
 d due to associated experimental challenges.\n\nBy employing focused ion b
 eam microfabrication we were able to conduct unprecedentedly precise measu
 rements of resistivity anisotropy in selected layered transition metal dic
 halcogenides. In the case of 1T-TaS2 – a compound exhibiting a plethora 
 of diverse phases – we observed a counterintuitive preference toward the
  out-of-plane conduction. We interpret this unusual behaviour in terms of 
 a charge-density-wave-induced formation of quasi-one-dimensional electroni
 c states extending along the c-axis of the crystal. Our study of the 2H an
 d 3R polytypes of NbS2 revealed that distinct layer stacking orders result
  in drastically different interlayer charge transport properties. Furtherm
 ore\, we observed an anomalous minimum in the temperature dependence of th
 e out-of-plane resistivity of 2H-NbS2\, as well as an unusual negative lon
 gitudinal c-axis magnetoresistance\, which we attribute to the prevalence 
 of stacking faults in the material.\n
LOCATION:Mott Seminar Room (531)\, Cavendish Laboratory\, Department of Ph
 ysics
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