BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//Talks.cam//talks.cam.ac.uk//
X-WR-CALNAME:Talks.cam
BEGIN:VEVENT
SUMMARY:From semiconductors to ion channels and beyond - Marie-Therese Wol
 fram (Applied PDE group\, DAMTP)
DTSTART:20090116T140000Z
DTEND:20090116T150000Z
UID:TALK14790@talks.cam.ac.uk
CONTACT:4520
DESCRIPTION:Drift diffusion systems serve as a mathematical model for a w
 ide range of phe-\nnomena in physics and biology. Classical examples inclu
 de semiconductor device\nsimulations\, newer ones ion channels or syntheti
 c channels.\nIn this talk we discuss different forward and inverse proble
 ms that arise in drift\ndiffusion systems. In particular we present an e
 fficient optimization procedure\nfor optimal design problems in semiconduc
 tor device applications. The objec-\ntives are to increase the on-state cu
 rrent while keeping the off-state current as\nsmall as possible. We illus
 trate the behavior of the scheme by 2D simulations\nof a MOSFET.\nIn addit
 ion we discuss the Poisson-Nernst-Planck (PNP) equations\, modeling\nthe m
 ovement of charged particles in ionic or synthetic channels. The classical
 \nPNP equations do not include finite size effects\; in recent years di
 fferent gen-\neralizations of the PNP equations have been proposed to inc
 lude these finite\nsize effects. We discuss numerical schemes for the PN
 P equations and present\nnumerical results for 2D simulations of ion chann
 els and synthetic channels.\n
LOCATION:MR14\,  Centre for Mathematical Sciences\, Wilberforce Road\, Cam
 bridge
END:VEVENT
END:VCALENDAR