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SUMMARY:Large dispersive interaction between a CMOS double quantum dot and
  microwave photons - David Ibberson\, Hitachi Ltd
DTSTART:20200925T100000Z
DTEND:20200925T110000Z
UID:TALK151252@talks.cam.ac.uk
CONTACT:40340
DESCRIPTION:We report a large coupling rate\, g/2π = 183 MHz\, between th
 e charge state of a double quantum dot in a CMOS split-gate silicon nanowi
 re transistor and microwave photons in a lumped-element resonator\, which 
 is formed by wire-bonding to a superconducting inductor fabricated on a se
 parate chip. We enhance the coupling by exploiting the large interdot leve
 r arm of an asymmetric split-gate device\, α =0.72\, and by inductively c
 oupling to the resonator to increase its impedance\, Z = 560 Ω. In the di
 spersive regime\, the large coupling strength at the DQD hybridisation poi
 nt produces a frequency shift comparable to the resonator linewidth\, the 
 optimal setting for maximum state visibility. We exploit this regime to de
 monstrate rapid gate-based readout of the charge degree of freedom\, with 
 an SNR of 3.3 in 50 ns. In the resonant regime\, the fast charge decoheren
 ce rate precludes reaching the strong coupling regime\, but we show a clea
 r route to spin-photon circuit quantum electrodynamics using hybrid CMOS s
 ystems.\n\nReferences\n\n1) https://arxiv.org/abs/2004.00334 \n\nZoom Link
 \n\nPlease click the link below to join the webinar:\nhttps://us02web.zoom
 .us/j/86846521451?pwd=M0VUSE5wTEJwSndCbEx0VUtqNHpuZz09\nPasscode: 226745\n
LOCATION:Virtually\, at Zoom
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