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SUMMARY:Suppression of phonon-assisted processes in InGaAs - Stuart Holmes
 \, UCL
DTSTART:20201009T100000Z
DTEND:20201009T110000Z
UID:TALK151258@talks.cam.ac.uk
CONTACT:40340
DESCRIPTION:I discuss the metal-to-insulator transition in disordered InGa
 As two-dimensional electron gas devices that are thermally isolated from a
  temperature reservoir. At high temperatures the devices are diffusion dom
 inated\, whilst at low temperatures they show insulating behaviour below c
 onductance (s) ~ e2/h. The device characteristics for a localization behav
 iour cross-over from ‘Mott’-variable range hopping to interaction-domi
 nated\, ‘Efros-Shklovskii’ conditions where a Coulomb gap can be obser
 ved are studied. The suppression of phonon-assisted processes in this regi
 on of transport can lead to the condition s(T) = 0 at finite temperature T
  with a breakdown in thermalization. Progress towards this transport regim
 e needed to study Many Body Localization effects are discussed with the im
 portance of this for future technology.\n\nZoom Link\n\nPlease click the l
 ink below to join the webinar:\nhttps://us02web.zoom.us/j/86846521451?pwd=
 M0VUSE5wTEJwSndCbEx0VUtqNHpuZz09\nPasscode: 226745
LOCATION:Virtually\, at Zoom
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