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SUMMARY:Irradiation-induced defect engineering in two-dimensional material
 s - Mahdi Ghorbani-Asl\, Helmholtz-Zentrum Dresden-Rossendorf 
DTSTART:20210211T140000Z
DTEND:20210211T150000Z
UID:TALK153955@talks.cam.ac.uk
CONTACT:Jan Behrends
DESCRIPTION:It is well known that structural defects have a remarkable inf
 luence on the optical\, electrical\, and catalytic properties of 2D materi
 als [1-2]. In addition to imaging utilization\, irradiation with electron 
 and ion beams allows precise control of defect generation by altering beam
  conditions and exposure dose [3-5]. We have studied the effects of ion ir
 radiation on 2D materials by using analytical potential molecular dynamics
  combined with Monte Carlo simulations. In particular\, we focused on the 
 defect production mechanisms and characterized different types of defects 
 in transition-metal dichalcogenides [6\,7]. The amount of damage in MoS2 m
 onolayer by the impacts of noble gas clusters was explored for a wide rang
 e of energies and incident angles. It was found that the behavior of free-
 standing and supported 2D materials under the ion beam can be quite differ
 ent\, as the backscattered ions or atoms sputtered from the substrate can 
 completely govern defect production [8]. We showed that cluster irradiatio
 n can produce uniform pores in 2D MoS2 nanomeshes for applications such a
 s gas separation [9]. The possibility of changing defect concentrations or
  inducing local amorphization of a 2D material opens a path for tuning its
  physical properties via a combination of thermal treatment and a reactive
  vapor. Moreover\, irradiation-induced defects may play a crucial role to 
 generate luminescent centers to enable quantum emitter applications [10].\
 n\nReferences\n[1] M. Ghorbani-Asl\, A. N. Enyashin\, et al. Phys. Rev. B
  88\, 245440 (2013). \n[2] B. Mohanty\, M. Ghorbani-Asl\, et al.\, ACS Cat
 al. 8\, 1683 (2018). \n[3] M. Kühne\, F. Börrnert\, S. Fecher\, M. Ghor
 bani-Asl\, et al.\, Nature 564\, 234 (2018).\n[4] E. Sutter\, Y. Huang\,
  H.-P. Komsa\, M. Ghorbani-Asl\, et al.\, Nano Lett. 16\, 4410 (2016). \n[
 5] T. Lehnert\, M. Ghorbani-Asl\, J. Köster\, et al.\, ACS Appl. Nano Mat
 er. 2\, 3262 (2019). \n[6] L. Ma\, Y. Tan\, M. Ghorbani-Asl\, et al.\, Nan
 oscale 9\, 11027 (2017).\n[7] M. Ghorbani-Asl\, S. Kretschmer\, D. E. Spea
 rot\, A.V. Krasheninnikov\, 2D Mater. 4\, 025078 (2017). \n[8] S. Kretschm
 er\, M. Maslov\, S. Ghaderzadeh\, M. Ghorbani-Asl\, et al.\, ACS Appl. Mat
 er. Inter. 10\, 30827 (2018).\n[9] S. Ghaderzadeh\, V. Ladygin\, M. Ghorba
 ni-Asl\, et al.\, ACS Appl. Mater. Inter. 12\, 37454 (2020).\n[10] M. Fisc
 her\, J. M. Caridad\, A. Sajid\, S. Ghaderzadeh\, M. Ghorbani-Asl\, et al
 . Sci. Adv.\, in press (2021).
LOCATION:Details of video conferencing will be distributed nearer the time
 .
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