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SUMMARY:Moving Atoms for Energy-Efficient Data Storage  - Dr Markus Hellen
 brand (Department of Materials Science and Metallurgy\, University of Camb
 ridge)
DTSTART:20210314T170500Z
DTEND:20210314T173000Z
UID:TALK158152@talks.cam.ac.uk
CONTACT:Miroslava Novoveska
DESCRIPTION:YouTube link: https://youtu.be/YiBXqfTzwEA\n\nRegistration for
 m to attend Q&A session on Zoom: https://forms.gle/tTRQreym7s6pR2rW6\n\nIt
  is estimated that by 2030\, internet and communication technologies (ICTs
 ) will consume up to 20% of total global energy and a large part of this i
 s due to limitations in current technologies of computer memory. Here\, I 
 will present approaches new forms of computer memory to reduce global ICT 
 energy consumption by manipulating materials at the atomic level. Current 
 memory technologies are either fast\, but volatile (i.e. the information i
 s lost when the power is switched off)\, or they are non-volatile\, but sl
 ow. This creates a bottleneck between processing data and storing it\, whi
 ch in turn reduces the efficiency of computers. New classes of so-called r
 esistive memory can overcome these limitations and form fast\, non-volatil
 e\, and energy-efficient memory cells. In current fast memory\, informatio
 n is stored in the amount of charge in a cell. This charge leaks away over
  time\, which induces the volatility of the memory. In resistive memory ce
 lls\, the information is encoded in the resistance\, instead\, which does 
 not leak away. The manipulation of the resistance – and thus the stored 
 information – is achieved by moving individual atoms\, and can be achiev
 ed very fast and with a very low energy consumption. Here\, I will present
  a short overview of some of these emerging resistive memory technologies 
 with a focus on our research in Cambridge.
LOCATION:Online
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