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SUMMARY:Silicon MOS quantum dots for spin-based quantum computation - Arne
  Laucht (UNSW Sydney)
DTSTART:20211022T100000Z
DTEND:20211022T110000Z
UID:TALK163027@talks.cam.ac.uk
CONTACT:40340
DESCRIPTION:Quantum computers are expected to outperform conventional comp
 uters for a range of important problems\, from molecular simulation to sea
 rch algorithms\, once they can be scaled up to large numbers of quantum bi
 ts (qubits)\, typically millions. Spin qubits in silicon MOS quantum dots 
 are one of the big contenders for a scalable\, solid state-based quantum c
 omputing platform. Here\, the qubits are encoded as the spin states of ind
 ividual electrons confined in electrostatically-gated quantum dots. The gr
 eat potential of this system has been demonstrated through various experim
 ents over the last few years\, with coherence times of up to T2=28 ms\, si
 ngle qubit control fidelities of 99.96%\, and two-qubit control fidelities
  of 98%.\n\nIn my presentation\, I will give an introduction to the SiMOS 
 quantum dot spin qubits that we employ at UNSW Sydney. I will showcase som
 e of the key experiments of the last years related to experimental challen
 ges of scaling a silicon-CMOS based quantum processor up to the millions o
 f qubits that will be required for fault-tolerant quantum computing. In pa
 rticular\, I will present our results of operating silicon spin qubits at 
 temperatures above 1 K [1\,2] that are important for the integration of co
 nventional CMOS control electronics with the qubit system\, and global con
 trol techniques that allow for the control of many qubits simultaneously.\
 n\n\n[1]	C. H. Yang\, R. C. C. Leon\, J. C. C. Hwang\, A. Saraiva\, T. Tan
 ttu\, W. Huang\, J. Camirand Lemyre\, K. W. Chan\, K. Y. Tan\, F. E. Hudso
 n\, K. M. Itoh\, A. Morello\, M. Pioro-Ladrière\, A. Laucht\, and A. S. D
 zurak. Operation of a silicon quantum processor unit cell above one kelvin
 . Nature 580\, 350 (2020).\n\n[2]	J. Y. Huang\, W. H. Lim\, R. C. C. Leon\
 , C. H. Yang\, F. E. Hudson\, C. C. Escott\, A. Saraiva\, A. S. Dzurak\, a
 nd A. Laucht. A High-Sensitivity Charge Sensor for Silicon Qubits above 1 
 K. Nano Letters 21\, 6328 (2021).\n\n[3]	E. Vahapoglu\, J. P. Slack-Smith\
 , R. C. C. Leon\, W. H. Lim\, F. E. Hudson\, T. Day\, J. D. Cifuentes\, T.
  Tanttu\, C. H. Yang\, A. Saraiva\, M. L. W. Thewalt\, A. Laucht\, A. S. D
 zurak\, and J. J. Pla. Coherent control of electron spin qubits in silicon
  using a global field. arXiv:2107.14622 (2021).\n\n\nWhere: Virtually on Z
 oom https://us02web.zoom.us/j/88908652048?pwd=MDV3N3k0YnNWMlhKOEk1NDZlUEta
 UT09 
LOCATION:Virtually\, at Zoom
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