\nResistive switching (RS) materials\, often called memristors\, are promising candidates for next-generation no n-volatile memory and neuromorphic computing applications. Positive attrib utes include simplicity\, compatibility with conventional semiconductor pr ocesses\, and the potential for 3D and scaling. Achieving all optimized pr operties together of very long retention\, fast switching time\, endurance \, uniformity\, multilevel switching and scaling is challenging. In this t alk\, I review the challenges of achieving simultaneous performance optimi zation and show how tuning the transport properties of ionic materials lea ds to superior performance. I demonstrate pronounced resistive switching a t low voltages (SET voltage <1.2 V without high-voltage electroforming)\, strong endurance (no change in resistance states after >1E6 cycles)\, unif ormity\, stable switching\, multilevel resistance states\, and fast switch ing speed\n
\nBiography\n\nJudith Driscoll is Professor in th e Materials Science Dept. at the University of Cambridge\, and is Royal Ac ademy of Engineering Chair in Emerging Technologies. She is also a visitin g staff member at Los Alamos National Lab. She researches nanostructured o xide thin films for low energy electronics and energy materials applicatio ns.\n!https://www.cape.eng.cam.ac.uk/files/driscoll_20211110_500.png! LOCATION:Online (registration required) END:VEVENT END:VCALENDAR