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SUMMARY:Semiconductor nanowires: harder\, better\, faster\, stronger - Pro
 fessor Hannah Joyce\, University of Cambridge
DTSTART:20230620T130000Z
DTEND:20230620T140000Z
UID:TALK202270@talks.cam.ac.uk
CONTACT:Dr Mark Leadbeater
DESCRIPTION:Abstract\n\nIII–V nanowires exhibit unique properties that d
 on't appear in their bulk counterparts: the ability to combine novel combi
 nations of lattice-mismatched materials\, more efficient light absorption 
 and light emission\, waveguiding\, more efficient charge transport\, high 
 Young's modulus\, high elastic failure limit\, reduced materials usage and
  lower temperature manufacturing conditions. These advantages translate to
  more efficient\, faster\, stronger and more environmentally-friendly devi
 ces. The non-planar nature of free-standing III–V nanowires therefore cr
 eates new opportunities for electronic and optoelectronic devices\, but it
  also necessitates new strategies for nanowire growth and integration. In 
 this presentation\, routes for nanowire growth and integration will be dis
 cussed. Firstly\, the growth parameters for catalyst-free III–nitride na
 nowire growth by metalorganic vapour phase epitaxy will be discussed. Surf
 ace modifications and passivation\, achieved either during growth or post-
 growth\, are also necessary for achieving reproducible device performance.
  We will present the development of a multiplexer chip capable of addressi
 ng single-nanowire transistors in arrays. Nanowires\, deterministically po
 sitioned on the multiplexer by transfer-printing\, exhibited reproducible 
 electrical behaviour and high device yield. The multiplexer’s ability to
  operate from room temperature down to milliKelvin temperatures enables th
 e study of quantum phenomena in multiple and interconnected nanowire devic
 es. A promising route towards flexible electronics involves embedding nano
 wires in a transparent polymer host matrix. By judicious choice of polymer
  type and deposition conditions\, the encapsulated nanowire array preserve
 s the as-grown orientation of the nanowires and can be removed from the ri
 gid growth substrate\, creating a flexible and robust device while permitt
 ing re-use of the substrate for subsequent growths. This process technique
  has been used to create flexible terahertz modulator devices based on arr
 ays of aligned GaAs nanowires.\n\nBiography\n\nHannah Joyce is Professor i
 n low-dimensional electronics at the University of Cambridge. She complete
 d her PhD at the Australian National University and a postdoc at the Unive
 rsity of Oxford. After joining Cambridge in 2013\, she established the "El
 ectronic and Photonic Nanodevices Group" in Division B. Her group focusses
  on the development of novel nanomaterials for applications in photonics a
 nd electronics. Her interests span the growth of nanowires\, terahertz spe
 ctroscopy for contact-free characterisation of nanomaterials\, and the dev
 elopment of new nanomaterial-enabled devices such as photodetectors and te
 rahertz photonic modulators.
LOCATION:West Hub Lecture Theatre 2 and Online (registration required)
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