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SUMMARY:Computer Design of new Non-Volatile Memory Materials: Interface En
 gineering - Stephen Elliott (University of Cambridge\, Dept. Chemistry)
DTSTART:20091116T160000Z
DTEND:20091116T170000Z
UID:TALK20360@talks.cam.ac.uk
CONTACT:Ian Farnan
DESCRIPTION:Silicon-based Flash non-volatile electronic-memory technology 
 will soon reach the end of its developmental roadmap. Hence\, there is an 
 urgent need for new non-volatile memory technologies to supercede Flash. I
 n this talk\, I will describe one such candidate\, namely phase-change mem
 ory\, wherein ultra-rapid (ns) reversible phase transformations between cr
 ystalline and amorphous phases of materials\, such as Ge-Sb-Te\, can be us
 ed to store non-volatile binary bits of information in terms of the electr
 ical-resistivity contrast between crystal and glass. In particular\, I wil
 l discuss ab initio molecular-dynamics simulations of the amorphisation/cr
 ystallisation behaviour of such materials\, and explain how this approach 
 can be used for the rational design of memory materials having better perf
 ormance\, such as even shorter crystallisation times that might enable suc
 h non-volatile memory elements to replace DRAM.\n
LOCATION:Harker 2 lecture room\, Department of Earth Sciences\, Downing Si
 te
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