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SUMMARY:Induced stress due to focused ion beam milling and minimum feature
  sizes - Dr Richard Langford\, Dept of Physics\, University of Cambridge
DTSTART:20091124T150000Z
DTEND:20091124T160000Z
UID:TALK20516@talks.cam.ac.uk
CONTACT:Dr Jonathan Barnard
DESCRIPTION:Focused ion beam (FIB) systems are routinely used to prepared 
 samples for physical and chemical analysis and micro and nanomachining. Un
 fortunately\, FIB imaging and sputtering may create stress within a materi
 al which can adversely affect a devices performance or a machined structur
 e. The first part of the talk discusses measurements to determine the magn
 itude of the induced stress in silicon as a function of dose.  The second 
 part of the talk discusses focused ion beam micro and nanofabrication meth
 ods to produce sub 5 nm structures and the  factors that dictate the minim
 um feature sizes.
LOCATION:T001 [Tower Seminar Room]\, Materials Science and Metallurgy\, De
 partment of
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