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SUMMARY:Towards the Next Generation of Spintronics: Transport in Van der W
 aals Antiferromagnets - Lishu Zhang\, Peter Grünberg Institut (PGI-1) and
  Institute for Advanced Simulation (IAS-1)\, Forschungszentrum Jülich\, G
 ermany
DTSTART:20240513T130000Z
DTEND:20240513T133000Z
UID:TALK216556@talks.cam.ac.uk
CONTACT:Dr Sun-Woo Kim
DESCRIPTION:Antiferromagnetic spintronics is an emerging field that capita
 lizes on the unique properties of antiferromagnetic materials for spin-bas
 ed information processing and storage\, presenting several advantages over
  their ferromagnetic counterparts. These include faster spin dynamics\, re
 duced susceptibility to external magnetic fields\, and the absence of stra
 y fields that interfere with adjacent devices.\n\nIn this talk\, I will un
 veil our theoretical investigations on the development of antiferromagneti
 c devices\, merging distinct yet interconnected explorations. Our journey 
 commences with the concept of van der Waals (vdW) field-free spin-orbital 
 torque (SOT) antiferromagnetic memory. Here\, we utilize a vdW bilayer LaB
 r2\, an antiferromagnet with perpendicular magnetic anisotropy\, coupled w
 ith a monolayer Td phase WTe2\, a Weyl semimetal with broken inversion sym
 metry.[1] This combination heralds devices with a strikingly low critical 
 current density of approximately 10 MA/cm2 and swift field-free magnetizat
 ion switching in 250 ps\, contributing to superior write performance with 
 minimal energy consumption. Moreover\, the device boasts a significantly l
 ow read error rate\, highlighted by a high tunnel magnetoresistance (TMR) 
 ratio of up to 4250%.\n\nI then transition to discussing current-driven ma
 gnetoresistance in vdW spin-filter antiferromagnetic tunnel junctions usin
 g MnBi2Te4. Our insights indicate that the current-voltage (I-V) character
 istics and\, consequently\, the TMR can be effectively manipulated by adju
 sting the device length and bias voltage. This control is further enhanced
  by incorporating a boron nitride layer\, which selectively suppresses spe
 cific spin channels based on the magnetic configurations\, leading to a TM
 R boost with values soaring up to 3690%.\n\nConcurrently\, we delve into t
 he enhancement of orbital transport in altermagnetic (spin-splitting band)
  RuO2. Through these concerted theoretical efforts\, we are paving the way
  for the next generation of high-efficiency\, high-performance antiferroma
 gnetic spintronic devices.\n\nReferences:\n\n[1] Zhang\, Lishu\, et al. "V
 an der Waals Spin-Orbit Torque Antiferromagnetic Memory." arXiv:2310.02805
 \n\n[2] Zhang\, Lishu\, et al. "Current-driven magnetic resistance in van 
 der Waals spin-filter antiferromagnetic tunnel junctions with MnBi2Te4" Ph
 ysical Review Applied 20 (4)\, 044056
LOCATION:Zoom link: https://zoom.us/j/92447982065?pwd=RkhaYkM5VTZPZ3pYSHpt
 UXlRSkppQT09
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