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SUMMARY:Emergent phenomena in nanosculpted devices of quantum materials - 
 Max Birch - RIKEN Center for Emergent Matter Science
DTSTART:20250305T111500Z
DTEND:20250305T120000Z
UID:TALK228184@talks.cam.ac.uk
CONTACT:Mads Fonager Hansen
DESCRIPTION:Electrons typically traverse a conductive medium in a diffusiv
 e manner\, resulting in a linear relationship between the measured voltage
  and applied current – known as Ohm’s law. However\, violations of Ohm
 ’s law may be found when the inherent symmetries of the underlying syste
 m are broken. Examples include the sliding motion of density waves\; balli
 stic or hydrodynamic electron transport\; or the symmetry-breaking realise
 d by lattice or magnetic order. Focused ion beam (FIB) fabrication methods
  enable precise nanoscale devices to be fashioned from high-quality single
  crystalline materials\, ideal for exploring these nonlinear phenomena. Su
 ch nanoengineering offers vast potential for the investigation of both fun
 damental physics and the development novel quantum devices. In this talk\,
  I will introduce three specific examples. Firstly\, we will explore the c
 urrent-induced sliding motion of a skyrmion lattice in Gd2PdSi3 and the re
 sulting emergent electrodynamics\, which originate from a time-dependent B
 erry phase. Secondly\, I will highlight our latest breakthrough to develop
  FIB fabrication of three dimensional nanostructures\, in the form of heli
 cal-shaped devices of the high-mobility Weyl magnet CoSn2S2. By breaking i
 nversion symmetry on the length scale of the electron mean free path\, we 
 observe large nonreciprocal transport\, resulting in a switchable diode ef
 fect. Finally\, if time permits\, I will discuss the possibility to fabric
 ate highly symmetrical devices\, which allows the probing of symmetry brea
 king along multiple directions of a material simultaneously – in this ca
 se exploited to study signatures of p-wave magnetism in Gd3Ru4Al12.
LOCATION:Mott Seminar Room (531)\, Cavendish Laboratory\, Department of Ph
 ysics
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