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SUMMARY:Oxygen-vacancy-induced charge carrier in n-type interface of LaAlO
 3 overlayer on SrTiO3 (001): interface vs bulk doping carrier - Nick Brist
 owe (TCM)
DTSTART:20100226T160000Z
DTEND:20100226T163000Z
UID:TALK23090@talks.cam.ac.uk
CONTACT:Daniel Cole
DESCRIPTION:"Yun Li\, S. Na Phattalung\, S. Limpijumnong and Jaejun Yu\, a
 rXiv:0912.4805\, 2009":http://arxiv.org/abs/0912.4805\n\nWe investigated t
 he role of oxygen vacancy in n-type interface of LaAlO3 (LAO) overlayer on
  SrTiO3 (STO) (001) by carrying out density-functional-theory calculations
 . Comparing the total energies of the configurations with one vacancy in v
 arying locations we found that oxygen vacancies favor to appear first in L
 AO surface. These oxygen vacancies in the surface generate a two-dimension
 al distribution of carriers at the interface\, resulting in band bending a
 t the interface in STO side. Dependent on the concentration of oxygen vaca
 ncies in LAO surface\, the induced carrier charge at the interface partial
 ly or completely compensates the polar electric field in LAO. Moreover\, t
 he electronic properties of oxygen vacancies in STO are also presented. Ev
 ery oxygen vacancy in STO generates two electron carriers\, but this carri
 er charge has no effect on screening polar field in LAO. Band structures a
 t the interface dependent on the concentrations of oxygen vacancies are pr
 esented and compared with experimental results.\n
LOCATION:TCM Seminar Room\, Cavendish Laboratory
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