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SUMMARY:Modelling excitons in 2D semiconductors: from charged defects to m
 oiré materials - Imperial College London
DTSTART:20250528T100000Z
DTEND:20250528T110000Z
UID:TALK232597@talks.cam.ac.uk
CONTACT:Kang Wang
DESCRIPTION:Excitons play a key role for the optical properties of 2D semi
 conductors\, but it can be difficult to understand the results of experime
 ntal measurements. To address this challenge\, theoretical calculations of
  excitonic properties provide useful insights. However\, performing such c
 alculations for systems containing defects or moiré patterns can be compu
 tationally challenging. In my talk I will present results for optical prop
 erties of charged defects in 2D semiconductors and also for twisted bilaye
 rs of 2D semiconductors obtained from an efficient implementation of the B
 ethe-Salpeter equation based on accurate tight-binding models. 
LOCATION:Cluster Seminar Room\, Ray Dolby Centre\, Cavendish Laboratory\, 
 JJ Thomson Avenue\, CB3 0US
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