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SUMMARY:Simulating Correlated Quasi-2D Materials - Jan Tomczak\, King's Co
 llege London
DTSTART:20250609T130000Z
DTEND:20250609T133000Z
UID:TALK232762@talks.cam.ac.uk
CONTACT:Dr Sun-Woo Kim
DESCRIPTION:About 20 years ago\, the synthesis of two-dimensional crystals
  and heterostructure meta-materials started a revolution in condensed-matt
 er physics: Graphene\, transition-metal dichalcogenides\, moiré multilaye
 rs\, and atomically precise interfaces and ultrathin films allowed the stu
 dy and discovery of many new phenomena—absent in 3D bulk samples. Here\,
  we will discuss some results\, challenges\, and opportunities for the sim
 ulation of (quasi-)2D materials with strong correlation effects: The rich 
 (but fragile) phase diagram of ultrathin SrVO3 films [1] suggested for use
  as Mott transistor [2]\, the connection between strong non-local fluctuat
 ions and momentum-dependent renormalizations in those films [3]\, and the 
 “Coulomb engineering” of 2D Mott materials\, where a temporary (and/or
  spatial) variation in the dielectric environment may trigger a selective 
 insulator-to-metal transition\, suggesting application in sensors (or nove
 l circuitry) [4].\n\n[1] M. Pickem\, J. Kaufmann\, K. Held\, JMT\, Phys. R
 ev. B 2\, 024307 (2021)\n[2] Z. Zhong et al\, Phys. Rev. Lett. 114\, 24640
 1 (2015)\n[3] M. Pickem\, JMT\, K. Held\, Phys. Rev. Research 4\, 033253 (
 2022)\n[4] E.G.C.P. van Loon et al\, npj 2D Materials and Applications 7\,
  47 (2023)\n
LOCATION:Zoom: https://zoom.us/j/92447982065?pwd=RkhaYkM5VTZPZ3pYSHptUXlRS
 kppQT09
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