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SUMMARY:Spins\, devices\, and the case for low-symmetry materials - Luis E
 . Hueso
DTSTART:20251104T160000Z
DTEND:20251104T170000Z
UID:TALK237637@talks.cam.ac.uk
CONTACT:Anna Perkins
DESCRIPTION:Spintronics is a field that seeks to use the spin of the elect
 ron as a way to process and store information. Instead of relying only on 
 charge\, spintronics adds an entirely new dimension to electronics. Over t
 he past three decades it has already transformed technology\, especially i
 n magnetic recording and non-volatile memories. A clear example is the suc
 cess of hard-disk drives\, which became widespread in the 1990s thanks to 
 the discoveries of giant and tunnelling magnetoresistance that enabled fas
 t and reliable magnetic reading.\n\nToday the discipline is entering a new
  phase. Emerging concepts in so-called post-CMOS technologies\, such as th
 e MESO architecture proposed by Intel\, aim to combine logic and memory in
  spin-based devices [1\,2]. Central to many of these approaches is spin-to
 -charge conversion\, a mechanism that makes it possible to generate and de
 tect pure spin currents electrically without the need for ferromagnetic ma
 terials.\n\nIn this talk I will describe how low-symmetry quantum material
 s provide fresh opportunities for advancing spin-to-charge conversion. Bui
 lding on our earlier work in single crystalline chiral semiconductors such
  as tellurium [3]\, I will show how twisted graphene and metal chalcogenid
 e heterostructures with reduced symmetry display complex spin textures whi
 ch lead to efficient and novel charge-to-spin conversion mechanisms. Our r
 esult offer pathways to outperform the standard metallic layers currently 
 used in spintronic devices and bring advanced research devices closer to r
 eal applications [4].\n\nReferences\n\n[1] S. Manipatruni et al.\, Nature 
 565\, 35 (2019).\n\n[2] V.T. Pham et al.\, Nature Electron. 3\, 309 (2020)
 \; D.C Vaz et al.\, Nature Commun. 15\, 1902 (2024).\n\n[3] F. Calavalle e
 t al.\, Nature Mater. 21\, 526 (2022)\; M. Suarez-Rodriguez et al.\, Phys.
  Rev. Lett. 132\, 046303 (2024)\; M. Suarez-Rodriguez et al.\, Adv. Mater.
  36\, 2400729 (2024)\; M. Suarez-Rodriguez et al.\, Nature Mater. 24\, 200
 5 (2025).\n\n[4] H. Yang et al.\, Nature Mater. 23\, 1502 (2024)\; Z. Chi 
 et al\, Adv. Mater. 36\, 231076 (2024)\; Nature Electron. 8\, 15 (2025).\n
 \n \n\nSpeaker Bio\n\nLuis E. Hueso is Ikerbasque Research Professor and l
 eader of the Nanodevices Group at CIC nanoGUNE in San Sebastián\, Spain. 
 He studied Physics at the University of Santiago de Compostela\, where he 
 obtained his PhD in 2002. After his doctorate he held research positions a
 t the University of Cambridge as a Marie Curie Fellow\, at the Consiglio N
 azionale delle Ricerche in Bologna\, and later at the University of Leeds\
 , before moving to nanoGUNE in 2008.\n\nHis research focuses on spintronic
 s and related areas of nanoscience\, in particular spin transport\, spin
 –orbit phenomena\, and the use of low-symmetry and quantum materials for
  novel device concepts. He has published more than 200 articles\, with ove
 r 17\,000 citations\, and has served as Associate Editor of the Journal of
  Materials Chemistry C. He was elected Fellow of the Royal Society of Chem
 istry in 2016.
LOCATION:Department of Materials Science\, 27 Charles Babbage Road\, Cambr
 idge CB3 0FS 
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