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SUMMARY:Studies of III-Nitride Quantum Wells And Optoelectronic Devices - 
 Prof. Rong Zhang (Nanjing University\, China)
DTSTART:20120127T160000Z
DTEND:20120127T170000Z
UID:TALK36156@talks.cam.ac.uk
CONTACT:3787
DESCRIPTION:Polarization and strain are key factors to influence energy ba
 nds of III-nitrides and their quantum wells\, due to very large spontaneou
 s and piezoelectric polarization in these materials. Based on these effect
 s\, people could also tailor the band structures and design novel devices 
 with new features. In this talk I will present theoretical calculations of
  band modification based on controlling polarization and strain in the III
 -nitride films and quantum structures. Polar and non-polar III-nitride mat
 erials and optoelectronic devices\, especially LEDs and UV detectors\, are
  fabricated and investigated via theoretical and experimental studies. 
LOCATION:Centre for Advanced Photonics and Electronics\, 9\, JJ Thomson Av
 e.
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