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SUMMARY:Graphene: Materials in the Flatland - Sir Konstantin S. Novoselov 
 FRS\, School of Physics and Astronomy\, University of Manchester\, M13 9PL
 \, UK
DTSTART:20120208T160000Z
DTEND:20120208T170000Z
UID:TALK36331@talks.cam.ac.uk
CONTACT:Leona Hope-Coles
DESCRIPTION:When one writes by a pencil\, thin flakes of graphite are left
  on a surface. Some of them are only one angstrom thick and can be viewed 
 as individual atomic planes cleaved away from the bulk. This strictly two 
 dimensional material called graphene was presumed not to exist in the free
  state and remained undiscovered until a few years ago. In fact\, there ex
 ists a whole class of such two-dimensional crystals. The most amazing thin
 gs about graphene probably is that its electrons move with little scatteri
 ng over huge (submicron) distances as if they were completely insensitive 
 to the environment only a couple of angstroms away. Moreover\, whereas ele
 ctronic properties of other materials are commonly described by quasiparti
 cles that obey the Schrödinger equation\, electron transport in graphene 
 is different: It is governed by the Dirac equation so that charge carriers
  in graphene mimic relativistic particles with zero rest mass. The very un
 usual electronic properties of this material as well as the possibility fo
 r it’s chemical modification make graphene a promising candidate for fut
 ure electronic applications. \nRecent progress in graphene samples product
 ion allowed for a dramatic improvement in quality. Thus\, mobilities of th
 e order of 106 cm2/Vs can be routinely achieved in mono- and bi-layer grap
 hene samples. This brought an influx of novel phenomena\, previously non-o
 bservable in this material. The influence of electron-electron interaction
  become dominant and exhibit itself in spectrum modification\, fractional 
 quantum Hall effect\, etc.\nMicromechanical or chemical exfoliation can al
 so be successfully applied to other layered materials such as Bi2Sr2CaCu2O
 x\, NbSe2\, BN\, MoS2\, Bi2Te3 and other dichalcogenides\, and epitaxial g
 rowth has been applied to grow monolayers of boron-nitride. As with graphe
 ne\, the crystal quality of the obtained monolayer samples is very high. M
 any of the 2D materials conduct and even demonstrate field effects (change
 s of the resistance with gating). The properties of the obtained 2D materi
 als might be very different from those of their 3D precursors. \nFurthermo
 re\, as we have full control over the 2D crystals\, we can also create sta
 cks of these crystals according to our requirements. Here\, we are not mer
 ely talking about stacks of the same material: we can combine several diff
 erent 2D crystals in one stack. Insulating\, conducting\, probably superco
 nducting and magnetic layers can all be combined in one layered material a
 s we wish\, the properties of such heterostructures depending on the stack
 ing order and easily tuneable\, introducing a new concept in material engi
 neering – Materials on Demand.\n
LOCATION:Pippard Lecture Theatre\, Cavendish Laboratory
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