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SUMMARY:Electric field induced ferromagnetic phase transition in semicondu
 ctors and metals - Dr Daichi Chiba\,  Department of Applied Physics\, Facu
 lty of Engineering\, The University of Tokyo 
DTSTART:20130515T130000Z
DTEND:20130515T140000Z
UID:TALK44642@talks.cam.ac.uk
CONTACT:Leona Hope-Coles
DESCRIPTION:The electrical control of magnetism adds a new dimension to fu
 ture spin-based information processing methods. The use of an electric fie
 ld instead of electric current is expected to make ultra-low power driving
  devices possible [1-9]. Ferromagnetic semiconductors have been the centra
 l material for this kind of research field because their magnetic properti
 es are a function of the carrier concentration. We have reported for the f
 irst time on the electric field control of the ferromagnetic phase transit
 ion and tuning of the Curie temperature by using (In\,Mn)As\, a ferromagne
 tic semiconductor [1]. We also reported on an electrical coercivity contro
 l\, and an electric-field assisted magnetization switching was demonstrate
 d by using it [2]. It was recently discovered that the magnetization direc
 tion can be controlled by controlling the magnetic anisotropy [3]. We beli
 eve that this opens up an entirely new route for electrical magnetization 
 switching without using a magnetic field or current. Reports have even mor
 e recently been released on the electric field control of magnetic propert
 ies in even ferromagnetic metal thin films [4-9]. We found that the ferrom
 agnetic phase transition can be induced in cobalt ultra-thin films by appl
 ying an electric field to them [7\,8]. In this talk\, I show that the expe
 rimental results of electric field control of various ferromagnetic proper
 ties in field effect structures with a channel made of III-V ferromagnetic
  semiconductors or 3d ferromagnetic transition metals.\n\n[1] H. Ohno\, D.
  Chiba\, F. Matsukura\, T. Omiya\, E. Abe\, T. Dietl\, Y. Ohno\, and K. Oh
 tani\, Nature 408\, 944 (2000).\n[2] D. Chiba\, M. Yamanouchi\, F. Matsuku
 ra\, and H. Ohno\, Science 301\, 943 (2003).\n[3] D Chiba\, M. Sawicki\, Y
 . Nishitani\, Y. Nakatani\, F. Matsukura\, and H. Ohno\, Nature 455\, 515 
 (2008).\n[4] M. Weisheit\, S. Fähler\, A. Marty\, Y. Souche\, C. Poinsign
 on\, and D. Givord\, Science 315\, 349 (2007).\n[5] T. Maruyama\, Y. Shiot
 a\, T. Nozaki\, K. Ohta\, N. Toda\, M. Mizuguchi\, A. A. Tulapurkar\, T. S
 hinjo\, M. Shiraishi\, S. Mizukami\, Y. Ando\, and Y. Suzuki\, Nature Nano
 technol. 4\, 158 (2009).\n[6] M. Endo\, S. Kanai\, S. Ikeda\, F. Matsukura
 \, and H. Ohno\, Appl. Phys. Lett. 96\, 212503 (2010).\n[7] D. Chiba\, S. 
 Fukami\, K. Shimamura\, N. Ishiwata\, K. Kobayashi\, and T. Ono\, Nature M
 ater. 10\, 853 (2011).\n[8] K. Shimamura\, D. Chiba\, S. Ono\, S. Fukami\,
  N. Ishiwata\, M. Kawaguchi\, K. Kobayashi\, and T. Ono\, Appl. Phys. Lett
 . 100\, 122402 (2012).\n[9] D. Chiba\, M. Kawaguchi\, S. Fukami\, N. Ishiw
 ata\, K. Shimamura\, K. Kobayashi\, and T. Ono\, Nature Comm. 3\, 888 (201
 2).
LOCATION:Small Lecture Theatre\, Cavendish Laboratory\, Department of Phys
 ics
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