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SUMMARY:Nano-Ferroelectric Materials and Devices - Professor James Scott\,
  Earth Sciences\, Cambridge
DTSTART:20051102T161500Z
DTEND:20051102T173000Z
UID:TALK4476@talks.cam.ac.uk
CONTACT:Duncan Simpson
DESCRIPTION:A summary is presented of recent developments in ferroelectric
  nanotubes\, nanowires and nanodots\, their electrical characterization an
 d related theories of their structures\, including the possibility of toro
 idal ordering.  Also summarized is recent work on ultra-thin single crysta
 ls (<70 nm) and a status report on ceramic thin films\, particularly in [3
 D] configurations for DRAM (dynamic random access memories) trenched capac
 itors. In the past four years in several countries\, including Russia\, Ge
 rmany\, the UK\, and the USA\, ferroelectric nano-structures have been pro
 duced and characterized.  At present a variety of techniques are employed 
 for their deposition or construction\, including sol-gel\, CVD\, and FIB (
 focused ion beam).  A popular technique involves the use of porous sacrifi
 cial substrates of either silicon or alumina.  With this method one can ob
 tain nanotubes and nanowires from ca. 20 nm diameter to approximately 4 mi
 crons.   A high degree of registration is obtainable with porous Si\, less
  so with Al2O3.  Meso-porous GaAs and GaN are also available.  In the pres
 ent talk I would like to show some examples of such ferroelectric nano-tec
 hnology\, together with a summary of the relevant theories and models\, an
 d suggestions for prototype devices.
LOCATION:Pippard Lecture Theatre\, Cavendish Laboratory\, Department of Ph
 ysics
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