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SUMMARY:3-dimensional dislocation imaging in the electron micoscope: Analy
 sis of delamination in GaN devices - Jonathan S Barnard\, Department of Ma
 terials Science and Metallurgy\, University of Cambridge
DTSTART:20060530T140000Z
DTEND:20060530T150000Z
UID:TALK4886@talks.cam.ac.uk
CONTACT:Edmund Ward
DESCRIPTION:This talk will examine the technique of three-dimensional mapp
 ing of dislocations in the transmission electron microscope (TEM) by combi
 ning weak-beam dark-field imaging with tomography. Even with a relatively 
 simple TEM\, we show that it is possible to recover the vast majority of d
 islocations with varying degrees of fidelity. We demonstrate this by exami
 ning the microstructure of plastically relaxed p-type gallium nitride that
  plays host to a variety of dislocation types. We show that the technique 
 works well for dislocations spaced above 10nm apart\, while below this it 
 is difficult to recover dislocations confidently. Future developments and 
 ideas will be discussed.\n
LOCATION:Austin Seminar Room\, Materials Science and Metallurgy\, Departme
 nt of
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