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SUMMARY:experimental and theoretical results on silicon Isolated Double Qu
 antum Dots (IDQDs) with nearby Single Electron Transistors (SETs)  - David
  Williams (University of Cambridge)
DTSTART:20140512T143000Z
DTEND:20140512T160000Z
UID:TALK51650@talks.cam.ac.uk
CONTACT:6270
DESCRIPTION:I will present a brief introduction to the Hitachi Cambridge L
 aboratory\, and then both experimental and theoretical results on silicon 
 Isolated Double Quantum Dots (IDQDs) with nearby Single Electron Transisto
 rs (SETs) for charge state sensing fabricated through trench isolation of 
 SOI. The IDQD can be described as an artificial molecule and is therefore 
 capable of exhibiting quantum states suitable for QIP. This silicon system
  has been chosen as a structure to carry out quantum operations and quantu
 m information processing due to various advantageous characteristics: Low 
 decoherence is expected due to low phonon coupling\, the isolation of the 
 active qubit device layer from an electron bath and the lack of direct ele
 ctrical connection to leads. The IDQD architecture is also easily scalable
  to many qubit devices as surface gates are not required to define the str
 ucture\, as such the optimised architecture can easily be developed in the
  silicon processing industry. Both charge and spin qubit operation can be 
 realised in the IDQD\, currently charge qubit operation is being pursued w
 ith the SET for readout. While the charge qubit is currently being pursued
 \, spin qubit operation can also be implementedin the IDQD.
LOCATION:Rutherford building\, Seminar Room B
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