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SUMMARY:Proof-of-concept of multi-electron-beam system - Osamu Kamimura\, 
 Central Research Laboartory\, Hitachi\, Japan
DTSTART:20060727T103000Z
DTEND:20060727T113000Z
UID:TALK5198@talks.cam.ac.uk
CONTACT:Edmund Ward
DESCRIPTION:In the fields of semiconductor device manufacturing and inspec
 tion\, a multi-electron-beam system is one of the most promising candidate
 s for both high resolution and high throughput.  In the multi-electron-bea
 m system\, uniformity of optical property\, individual blanking control\, 
 and accurate calibration of beam position and dose are important.  Multi-e
 lectron-beam systems can be roughly divided into three types: 1) multi-col
 umn with multi-source\, 2) single-column with multi-source\, and 3) single
 -column with single-source.  We adopted single-column system with single-c
 olumn because we thought that this system is simpler than the others and h
 as an advantage in stability and fewer calibrations.\n\nIn our system\, th
 e beam\, which emitted from LaB6 single electron source with an accelerati
 on voltage of 50 kV\, is collimated by the collimator lens to illuminate m
 ulti-source-module (MSM).  The MSM consists of three devices\, aperture ar
 ray (AA: beam dividing aperture)\, static lens array (SLA: focusing lens f
 or each divided beam to form the intermediate source images)\, and blanker
  array (BLA: pairs of electrodes as blankers for each focused beam)\, and 
 forms 1024 multiple beams.  The intermediate source image at BLA is demagn
 ified by the projection optics.  The projection optics is constructed by d
 ouble lens-doublet for low-distorted projection.  In the projection optics
 \, the blanking aperture and deflector are installed.  The beam\, which is
  applied blanking voltage\, is cut off at the blanking aperture\, and the 
 beams\, which passed the blanking aperture\, are deflected together.\n\nWe
  verified the actions of SLA and BLA\, and successfully formed 1024 multip
 le beams.  Moreover\, some pattern delineations were executed as verificat
 ion of individual beam control with several beams among the 1024 beams.  I
 t remains the measurement of optical property and verification of calibrat
 ion of beam position and dose.  With those results\, it will be verified t
 hat our multi-beam system has potential use in inspection or lithography p
 rocess of semiconductor device production.
LOCATION:Austin Seminar Room\, Materials Science and Metallurgy\, Departme
 nt of
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