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SUMMARY:Nano-Spintronic Devices - Prof Atsufumi Hirohata\, Dept of Electro
 nics\, University of York  and  PRESTO\, Japan Science and Technology Agen
 cy
DTSTART:20150309T141500Z
DTEND:20150309T151500Z
UID:TALK58380@talks.cam.ac.uk
CONTACT:Teri Bartlett
DESCRIPTION:Recent advancement in nanofabrication and growth allows the ut
 ilisation of spin-polarised electrons in transport and dynamics\, resultin
 g in the development of spintronic devices [1]. In the spintronic devices\
 , the key technologies are injection\, manipulation and detection of spin-
 polarised electron in a non-magnetic media with high efficiency.\n\nConven
 tionally such a spin-polarised electron current has been injected into a n
 on-magnetic material by flowing an electrical current through a ferromagne
 tic layer. However\, its spin polarisation is dependent upon the interfaci
 al properties\, such as conductance matching\, junction resistance and int
 erfacial resonant states. We recently succeeded to fabricate an abrupt Fe/
 GaAs(001) interface for the first time and have demonstrated reproducible 
 spin transport across the interface [2]. This system offers an ideal junct
 ion to form a spin-polarised field effect transistor for example.\n\nWe al
 so demonstrated spin-current amplification in a lateral spin-valve (LSV) u
 sing a geometrical ratchet effect [3]. Two Py nanowires were designed to b
 e 30 nm thick and 200 nm wide bridged by a Cu nanowire (70 nm thick and 10
 0 nm wide). Here\, the central part of the Cu wire was modified into the f
 ollowing geometrical ratchet shapes with allowing 50 nm separation between
  the Py wires and the ratchets. We measured over 700% spin-current amplifi
 cation for the right-angled triangles with 100 nm base and 60 nm height.\n
 \nBy utilising these fundamental building blocks\, we can also develop a l
 arge variety of new devices.\n\nThis work was partially supported by the E
 PSRC (EP/I000933/1 and EP/K03278X/1)\, Royal Society Industry Fellowship\,
  EC (NMP3-SL-2013-604398) and JST-PRESTO.\n\n[1] A. Hirohata and K. Takana
 shi\, J. Phys. D: Appl. Phys. (in press).\n[2] L. R. Fleet et al.\, Phys. 
 Rev. B 87\, 024401 (2013).\n[3] R. M. Abdullah et al.\, J. Phys. D: Appl. 
 Phys. 47\, 482001 (2014).\n
LOCATION:Mott Seminar Room (Mott Building Room 531)\, Cavendish Laboratory
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