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SUMMARY:(SP Wednesday Workshop) Electrically contacting a low number of Pb
 S nanocrystals using graphene  - Mr Hippolyte Astier\, University of Cambr
 idge\, Semiconductor Physics Group
DTSTART:20150624T131500Z
DTEND:20150624T141500Z
UID:TALK59554@talks.cam.ac.uk
CONTACT:Teri Bartlett
DESCRIPTION:Reducing the scale of electronic components to that of nanocry
 stals or molecules often implies low scalability and complex fabrication. 
 Horizontal architectures generally require costly and sequential processes
  such as electron beam lithography[1]\, whilst vertical arrangements using
  metal evaporation onto molecules or nanocrystals can damage them or cause
  short circuits[2]. The one-atom-thick material graphene has a number of u
 nique mechanical\, electronic and thermodynamic properties that has made i
 t an active field of research since its discovery in 2004[3].  As efforts 
 are being made to make use of these properties in nanotechnology\, its gre
 at potential in nanoelectronics and optoelectronics is being revealed and 
 architectures of nanodevices using graphene sheets as electrodes have been
  proposed[4\,5].\n\nWe present a novel architecture to investigate electro
 nic transport in colloidal nanocrystals that offers high scalability and f
 lexibility using single-layer graphene as a top electrode. Combining botto
 m-up and top-down techniques we contacted monolayers of PbS nanocrystals e
 lectrically and observed the electron transport in such junctions as a fun
 ction of potential bias. Preliminary results suggest the occurrence of qua
 ntum Coulomb blockade[6] in the nanocrystals. In this talk I will describe
  our devices\, their fabrication and measurement as well as perspectives f
 or their refinement and development.\n\n[1] D.L. Klein et al.\, Applied Ph
 ysics Letters 68\, 2574\, 1996.\n[2] H. Haick et al.\, J. Phys. Chem. C\, 
 111\, 2318-2329\, 2007.\n[3] A.K. Geim\, Science\, 324\, 5934\, 1530-1534\
 , 2009.\n[4] J.M. Yuk et al.\, Nano Lett.\, 11\, 3290–3294\, 2011.\n[5] 
 G. Wang et al.\, Adv. Matter\, 23\, 755-760\, 2011.\n[6] U. Meirav and E. 
 B. Foxman\, Semicond. Sci. Technol. 11\, 255–284\, 1996.\n
LOCATION:Mott Seminar Room (Mott Building Room 531)\, Cavendish Laboratory
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