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SUMMARY:Strategies for scalable large-area electronics with improved opera
 tion frequency - Dr Mario Caironi\, Istituto Italiano di Tecnologia
DTSTART:20151201T143000Z
DTEND:20151201T153000Z
UID:TALK60888@talks.cam.ac.uk
CONTACT:Stuart Higgins
DESCRIPTION:Polymer semiconductors with steadily improved electronic prope
 rties are being synthesized\, achieving charge mobility in excess of 1 and
  10 cm2/Vs for electrons and holes\, respectively. Such performances are s
 ufficient for a large range of applications of printed\, light-weight and 
 mechanically robust circuits\, in diverse fields such as wearable electron
 ics\, smart packaging\, and bio-electronics. A key to enable these technol
 ogies is the possibility of using high-throughput\, large-area printing pr
 ocesses to pattern polymer semiconductors with uniform and optimized morph
 ologies. By controlling the self-assembling properties of model donor-acce
 ptor copolymers\, in combination with simple\, roll-to-roll compatible coa
 tings\, it is possible to achieve well-ordered and efficient charge-transp
 ort nanostructures over large-areas. In particular\, such control can be e
 xtended from films tens of nanometers thick\, down to mono- or sub-monolay
 ers\, still retaining high-charge mobility. The mapping of charge-induced 
 features within the channel of working devices is critical to unveil the n
 exus between film microstructure and electronic properties in such deposit
 ed films.\n\nThe level of control of the deposition process can boost the 
 operational frequencies of printed polymer electronics well into the MHz r
 egime without recurring to extreme downscaling\, thus maintaining compatib
 ility with cost-effective manufacturing of large-area circuits.\nBy combin
 ing printing and laser-based direct-writing techniques\, additional strate
 gies to boost the transition frequency of polymer based devices will be de
 scribed. In particular\, we demonstrate the possibility to achieve MHz ope
 ration in all-organic transistors on plastic foils\, where short channels 
 are ablated by a fs-laser. Moreover\, we show that fs-laser sintering is a
 nother very promising approach for fast direct-written devices\, with the 
 possibility of achieving > 10 MHz regime already with an transistor mobili
 ty in the range of ~1 cm2/Vs thanks to the drastically reduced capacitive 
 parasitism.
LOCATION:Kapitza Building Seminar Room\, Cavendish Laboratory\, Department
  of Physics
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