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SUMMARY:Molecular Beam Epitaxy in the Semiconductor Physics Group (SP Work
 shop) - Dr Harvey Beere\, University of Cambridge\, Semiconductor Physics 
 Group
DTSTART:20151028T141500Z
DTEND:20151028T151500Z
UID:TALK60985@talks.cam.ac.uk
CONTACT:Teri Bartlett
DESCRIPTION:Molecular Beam Epitaxy (MBE) is a growth technique capable of 
 providing the highest achievable purity\nfilms in semiconductor sample gro
 wth.\n\nIn this workshop\, a brief introduction to the MBE growth process 
 and technology will be presented. This\nwill be expanded to describe the g
 rowth systems/capability the group currently has\, as well as giving a his
 torical overview. Information on a 'typical' growth campaign and the proce
 ss of requesting new wafers will be given\, as well as useful instruction 
 on gaining the most information from the data stored on the group's MBE da
 tabase.\n\nWhile the talk will be aimed at the new arrivals to the group\,
  all SP members should find it of use\n- especially with an update on the 
 group's growth capability and new growth members.\n
LOCATION:Mott Seminar Room (Mott Building Room 531)\, Cavendish Laboratory
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