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SUMMARY:The development of silicon compatible processes for HEMT realisati
 on - Dr Menglin Cao (CAPE)\, University of Cambridge
DTSTART:20151207T141500Z
DTEND:20151207T151500Z
UID:TALK62857@talks.cam.ac.uk
CONTACT:Teri Bartlett
DESCRIPTION:Compound semiconductor (III-V) devices are crucially important
  in a range of RF/microwave applications. High Electron Mobility Transisto
 rs (HEMTs)\, as the best low noise high frequency compound semiconductor d
 evices\, have been utilised in various applications at microwave and mm-wa
 ve frequencies such as communications\, imaging\, sensing and power. Howev
 er\, silicon based manufacturing will always be the heart of the semicondu
 ctor industry. III-V devices are conventionally fabricated using gold-base
 d metallisation and lift off processes\, which are incompatible with silic
 on manufacturing processes based on blanket metal or dielectric deposition
  and subtractive patterning by dry etching techniques. Therefore\, the cha
 llenge is to develop silicon compatible processes for the realisation of c
 ompound semiconductor devices\, whilst not compromising the device perform
 ance. In this work\, silicon compatible processes for HEMT realisation hav
 e been developed\, and in particular a copper-based T-gate fabricated by s
 ilicon compatible process will be presented in this presentation.
LOCATION:Small Lecture Theatre\, Bragg Building\, Room 133\, Cavendish Lab
 oratory\, Department of Physics
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