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SUMMARY:Low-Temperature Solution-Processed Metal-Oxide Semiconducting Hete
 rostructures for Large-Area Electronics: A Facile Approach Towards Charge-
 Transport Enhancement - Dr Yen-Hung Lin\, Imperial College London
DTSTART:20160209T143000Z
DTEND:20160209T153000Z
UID:TALK63276@talks.cam.ac.uk
CONTACT:Stuart Higgins
DESCRIPTION:Large-area electronics represent an emerging technology for ap
 plications in a wide range of novel\, unconventional forms of electronic s
 ystems applicable to every corner of our daily life. At the heart of this 
 technology it relies on the use of specially formulated functional inks/pr
 ecursor formulations that can be processed using scalable techniques onto 
 large-area substrates forming these functional systems. However\, owing to
  the relatively low performance associated solution-processed large-area d
 evices and systems\, the development\nof advanced materials and/or novel d
 evice concepts with enhanced performance characteristics\, is urgently nee
 ded.\n\nIn this talk I will focus on my recent work on the development and
  application of solutionprocessable\nmetal oxide materials and is divided 
 into two parts. In the first part I will discuss the development of soluti
 on-processed low-dimensional oxide heterostructures and\nsuperlattices as 
 a way to enhance electron transport and their subsequent application in hi
 ghperformance\nthin-film transistors.[1] The low dimensional nature of the
 se easy-to-grow metal oxide layers also opens the door to a wide range of 
 interesting physical phenomena\, which will be the subject of the second p
 art of my talk.[2] In particular\, I’ll introduce the energy quantisatio
 n phenomena observed in some of these solution-processed metal oxide syste
 ms and their exploitation in large-area quantum-effect devices such as res
 onant tunneling diodes.[3] Use of these low-dimensional transistors as a u
 nique test-bed for the study of\nmolecular doping\, will also be discussed
 .[4] Finally\, the use of high-mobility oxide heterointerface transistors 
 for opto-electronic applications will be briefly introduced.[5]\n\n\n[1] Y
 .-H. Lin\, H. Faber\, J. G. Labram\, E. Stratakis\, L. Sygellou\, E. Kymak
 is\, N. A. Hastas\, R. Li\, K.\nZhao\, A. Amassian\, N. D. Treat\, M. McLa
 chlan\, T. D. Anthopoulos\, Adv. Sci. 2015\, 2\, 1500058.\n[2] J. G. Labra
 m\, Y.-H. Lin\, T. D. Anthopoulos\, Small 2015\, 5472.\n[3] J. G. Labram\,
  Y.-H. Lin\, K. Zhao\, R. Li\, S. R. Thomas\, J. Semple\, M. Androulidaki\
 , L. Sygellou\,\nM. McLachlan\, E. Stratakis\, A. Amassian\, T. D. Anthopo
 ulos\, Adv. Funct. Mater. 2015\, 25\, 1727.\n[4] S. P. Schießl\, H. Faber
 \, Y.-H. Lin\, S. Rossbauer\, Q. Wang\, K. Zhao\, A. Amassian\, J. Zaumsei
 l\, T.\nD. Anthopoulos\, Adv. Mater. 2015\, DOI: 10.1002/adma.201503200.\n
 [5] M. Ullah\, Y.-H. Lin\, K. Muhieddine\, S.-C. Lo\, T. D. Anthopoulos\, 
 E. B. Namdas\, Adv. Opt.\nMater. 2015\, DOI: 10.1002/adom.201500474.
LOCATION:Kapitza Building Seminar Room\, Cavendish Laboratory\, Department
  of Physics
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