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SUMMARY:Low bias gate tunable THz plasmonics signatures in CVD graphene of
  varying grain size (SP Workshop) - Mr Varun Kamboj\, University of Cambri
 dge\, Semiconductor Physics Group
DTSTART:20160302T141500Z
DTEND:20160302T151500Z
UID:TALK64318@talks.cam.ac.uk
CONTACT:Teri Bartlett
DESCRIPTION:We report the characterization of centimetre sized graphene fi
 eld-effect transistors with ionic gating which enables active frequency an
 d amplitude modulation of terahertz (THz) radiation. Chemical vapour depos
 ited graphene with different grain sizes were studied using THz time-domai
 n spectroscopy. We demonstrate that the plasmonic resonances intrinsic to 
 graphene can be tuned over a wide range of THz frequencies by engineering 
 the grain size of the graphene. Further frequency tuning of the resonance\
 , up to ~65 GHz\, is achieved by electrostatic doping via ionic gating. Th
 ese results present the first demonstration of tuning the intrinsic plasmo
 nic resonances in graphene. 
LOCATION:Mott Seminar Room (Mott Building Room 531)\, Cavendish Laboratory
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