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SUMMARY:Advanced epitaxy of the group IV (Si-Ge-C-Sn) semiconductors - Dr 
 Maksym Myronov (Department of Physics\, University of Warwick)
DTSTART:20160226T150000Z
DTEND:20160226T160000Z
UID:TALK64505@talks.cam.ac.uk
CONTACT:Dr. Jonathan D. Mar
DESCRIPTION:Epitaxy is a process of growing a crystal of a particular orie
 ntation on top of another crystal\, where the orientation is determined by
  the underlying crystal. The over layer is called an epitaxial film\, epit
 axial layer or epilayer. Since 1950’s epitaxial growth has been a key fa
 ctor in the development of modern technologies based on semiconductor mate
 rials. They are the foundation of modern electronic\, photonic\, photovolt
 aic\, thermoelectric and many other semiconductor devices. Anything that i
 s computerized or uses radio waves contains semiconductor devices. Nowaday
 s\, it is crucial to produce thin layers and multilayers with high crystal
 lographic quality\, sharp interfaces\, and homogeneous doping. Access to m
 iniaturization allows the design and achievement of materials with artific
 ial properties\, which are not found in natural elements or compounds in b
 ulk form. Due to the precise control over chemical composition\, doping\, 
 and crystal size made possible by modern epitaxial methods\, one can obtai
 n entirely novel physical properties that are often based on quantum pheno
 mena arising from the confinement of charge carriers in very tiny volumes\
 , where low-dimensional effects play an important role.\n\nToday\, most se
 miconductor devices are fabricated of Silicon (Si). Novel group IV semicon
 ductor epitaxial structures created of Silicon (Si)\, Germanium (Ge)\, Car
 bon (C ) or Tin (Sn) on a Si substrate is a natural evolution in improveme
 nt of properties of modern state of the art Si devices and expanding their
  existing functionalities. They underpin application of these materials wi
 th new or enhanced properties in photonic\, photovoltaic\, thermoelectric\
 , spintronic\, microelectromechanical systems/nanoelectromechanical system
 s (MEMS/NEMS)\, sensor and many other devices. Advanced epitaxial techniqu
 es\, such as chemical vapour deposition (CVD) and molecular beam epitaxy (
 MBE)\, enable control of the epilayers thickness to monolayer accuracy. Ma
 ny advanced metamaterials such as multiple quantum wells (QWs) and superla
 ttices are fabricated routinely using such epitaxial growth techniques in 
 both research laboratories and industrial manufacturing facilities around 
 the world. Although these structures and devices are of great importance b
 y themselves\, a more exciting future for various devices and systems on c
 hip requires planar integration of individual devices to achieve compactne
 ss\, lower loss\, higher robustness\, and more superior performance. In pa
 rticular\, there is great interest in creating such structures by a mass p
 roduction technique such as reduced pressure CVD (RPCVD). It offers the ma
 jor advantage of unprecedented wafer scalability and is nowadays routinely
  used by leading companies in the semiconductor industry to grow epitaxial
  layers on Si wafers of up to 300 mm diameter. A brief overview of recent 
 achievements in the advanced epitaxy of the group IV semiconductors and un
 derpinning of the new materials properties and potential devices applicati
 ons will be presented.
LOCATION:Small Lecture Theatre\, Bragg Building\, Cavendish Laboratory (Ph
 ysics Department)
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