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SUMMARY:Next-generation computer-memory technology: crossover between phys
 ics\, chemistry\, materials science and engineering - Dr Stephen Elliott
DTSTART:20160306T120500Z
DTEND:20160306T130000Z
UID:TALK64919@talks.cam.ac.uk
CONTACT:Andrew Carlotti
DESCRIPTION:Electronic devices based on Si-CMOS devices have exhibited an 
 astonishing technological progress over the last 50 years or so\, allowing
  the electronic revolution which now permeates every aspect of our current
  society. This can be quantitatively described by 'Moore's Law': "the numb
 er of transistors in integrated circuits (ICs) doubles roughly every two y
 ears". This extraordinary technological progress has been achieved by prog
 ressive improvements in lithographic patterning of ICs\; in 1971\, the min
 imum IC feature size achievable was 10 microns\; now it is 14 nm. However\
 , this seemingly inexorable progress will shortly come to a halt\; such na
 noscale dimensions mark the point at which dielectrics are no longer elect
 rically insulating due to electron tunnelling\, and semiconductors no long
 er behave like bulk materials but quantum-size effects start to appear.\nI
 t is evident that a completely new electronic-memory technology needs to b
 e developed. I will describe one very strong candidate\, viz. non-volatile
  'phase-change random-access memory' (PCRAM)\, in which applied voltage pu
 lses can switch materials from a high-conductance crystalline state to a l
 ow-conductance amorphous state on the sub-ns time-scale. Here\, binary dat
 a are stored in the atomic-structural state of the memory material\, rathe
 r than as stored electronic charge in the case of Si-CMOS devices. I will 
 describe how PCRAM devices are replacing flash memory and could be used as
  the basis of novel 'neuromorphic' (brain-like) computing devices – i.e.
  artificial synapses.
LOCATION:Winstanley Lecture Theatre
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