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SUMMARY:Extreme heteroepitaxy: MnSb on III-V semiconductors - Gavin Bell (
 University of Warwick)
DTSTART:20070223T091500Z
DTEND:20070223T101500Z
UID:TALK6619@talks.cam.ac.uk
CONTACT:Dr. Oliver Inderwildi
DESCRIPTION:Heteroepitaxial growth allows materials with differing electro
 nic\, magnetic or optical properties to\nbe combined in a single structure
 . All-semiconductor heteroepitaxy has been used for many years\, the\nprot
 otypical example being AlAs/GaAs - two materials with identical crystal st
 ructures and nearly identical lattice parameters. Recently\, the epitaxial
  ombination of far more diverse materials has become important. For exampl
 e\, epitaxial rare-earth oxides are beginning to replace amorphous silicon
  oxide as the gate dielectric in high performance field-effect transistors
 . \nI will introduce some background to the field of spintronics' - which 
 involves manipulating electrons in devices by their spin as well as their 
 charge - and explain how mastering the heteroepitaxial combination of dive
 rse materials is likely to be crucial. I will then discuss a specific syst
 em\, namely MnSb (a metallic ferromagnet with hexagonal crystal structure)
  grown on III-V semiconductor substrates.
LOCATION:Dept. of Chemistry\, U203
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