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SUMMARY:Kinetic measurements during the nucleation and growth of Si and Ge
  - Frances M Ross\, IBM T J Watson Research Center
DTSTART:20070206T150000Z
DTEND:20070206T160000Z
UID:TALK6636@talks.cam.ac.uk
CONTACT:Nathan Church
DESCRIPTION:By carrying out chemical vapour deposition of semiconductors i
 n the presence of small particles of a catalytic material\, it is possible
  to grow wirelike structures microns long and below 100nm in diameter.  Su
 ch nanowires have interesting electronic properties and have already been 
 incorporated into functional devices. Even more applications can be envisa
 ged for branched nanowires or nanowires grown epitaxially at precise locat
 ions over an entire wafer. In this presentation we will discuss the growth
  of epitaxial nanowires in Si and Ge using Au as the catalyst\, focusing o
 n the kinetic processes that influence nucleation and final shape. Growth 
 takes place in an environmental TEM\, which has capabilities both for evap
 orating Au onto a clean Si substrate\, and for introducing the precursor g
 ases while the sample remains under observation. In situ video rate observ
 ations allow us to measure nucleation events and nanowire growth rates\, e
 xamine the catalyst structure directly\, and determine the effects of chan
 ges in growth environment on wire shapes. We will focus in particular on t
 he factors that affect shape and the reliability of nucleation\, and consi
 der how the in situ results may help in tailoring wire structures for part
 icular applications.
LOCATION:T001 [Tower Seminar Room]\, Materials Science and Metallurgy\, De
 partment of
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