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SUMMARY:Molecular adsorption and strained graphene on boron nitride - Pete
 r Beton\, School of Physics &amp\; Astronomy\, University of Nottingham
DTSTART:20170216T160000Z
DTEND:20170216T170000Z
UID:TALK69145@talks.cam.ac.uk
CONTACT:Stephen Walley
DESCRIPTION:We have used high resolution ambient AFM to investigate the pr
 operties of graphene grown on hBN flakes on sapphire using molecular beam 
 epitaxy (MBE) and find that giant moiré patterns form indicating that the
  graphene is highly strained. We also observe highly facetted cracks in th
 e graphene leading to local regions of strain relief and highly anisotropi
 c distortion of the graphene. It is also possible to use the AFM to genera
 te cracks in the graphene which propagate over long distances. MBE has als
 o been used to grow hBN on graphite which shows excellent electrical prope
 rties and the prospects for the growth of heterostructures formed from str
 ain-engineered graphene and hBN are discussed.
LOCATION:Mott Seminar Room\, Cavendish Laboratory
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