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SUMMARY:Failure analysis of semiconductor lasers - Richard Beanland\, Book
 ham Technology\, Caswell
DTSTART:20070726T140000Z
DTEND:20070726T150000Z
UID:TALK7738@talks.cam.ac.uk
CONTACT:Edmund Ward
DESCRIPTION:Fully processed wafers of III-V semiconductor lasers have a po
 tential value of tens of thousands of pounds\; yield and reliability issue
 s can therefore be very expensive.  The most challenging problems occur wh
 en defects or processing issues which are introduced during fabrication ar
 e latent in the device\; performance is good upon initial test\, but the d
 evices degrade during burn in or an accelerated life test trial.\n  This t
 alk describes the type of failure analysis study which is needed to solve 
 these issues\, using examples from work done at Bookham Technology\, Caswe
 ll.  Specimen preparation is challenging\, requiring analysis of specific 
 sites on individual devices\, and usually several types of analysis are us
 ed\, including electroluminescence\, SEM\, FIB and TEM - often on the same
  device.\n  Results of an accelerated life test study of InAs/GaAs quantum
  dot lasers are also presented.  These indicate that quantum dot material 
 is inherently resistant to defect propagation - much more so than devices 
 which use quantum wells.\n
LOCATION:T001 [Tower Seminar Room]\, Materials Science and Metallurgy\, De
 partment of
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