BEGIN:VCALENDAR VERSION:2.0 PRODID:-//Talks.cam//talks.cam.ac.uk// X-WR-CALNAME:Talks.cam BEGIN:VEVENT SUMMARY:Organic electronic devices characterized with NEXAFS Microscopy an d Resonant Soft X-Ray Reflectivity - Prof. Harald Ade\, North Carolina Sta te University DTSTART:20070920T133000Z DTEND:20070920T143000Z UID:TALK8098@talks.cam.ac.uk CONTACT:Chris McNeill DESCRIPTION:Organic electronic devices are often multi-component\, heterog eneous systems ranging from relatively well defined bilayers to thin film blends laterally phase-separated at multiple length scales. Complete under standing of device structures and morphology and the correlation to device performance often requires sophisticated cauterization methods. Near Edge X-ray Absorption Fine Structure (NEXAFS) microscopy and resonant soft x-r ay reflectivity (RSoXR) are techniques that offer high intrinsic contrast to image materials in real space or characterize structure in reciprocal s pace with ~30 nm spatial resolution and a q-range of ~2 nm-1\, respectivel y. Furthermore\, the high contrast is strongly photon energy dependent and correlated to the chemical moieties present in the sample\, thus allowing compositionally sensitive characterization. I will present the present st ate of the art of these characterization tools with a focus on the most re cent applications to organic electronic devices. This includes the develop ment of Soft X-ray Beam Induced Current (SoXBIC) measurements that will al low to directly correlate local efficiency in organic bulk-heterojunction solar cell to the local composition and the use of RSoXR to characterize i nterfacial properties in multilayered OLEDs for which conventional reflect ivity has no sensitivity. The use of these soft x-ray methods for organic devices has only recently been initiated by McNeill et al. and their full potential to device characterization has yet to be explored. LOCATION:MRC Seminar Room M208\, Cavendish Laboratory\, Department of Phys ics END:VEVENT END:VCALENDAR